Determination of diamond film quality during growth using in situ Raman spectroscopy
- 31 January 1994
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 3 (1-2) , 22-29
- https://doi.org/10.1016/0925-9635(94)90025-6
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Large anisotropic thermal conductivity in synthetic diamond filmsNature, 1992
- In situ Raman spectroscopy of diamond during growth in a hot filament reactorJournal of Applied Physics, 1992
- First-order Raman scattering in homoepitaxial chemical vapor deposited diamond at elevated temperaturesThin Solid Films, 1992
- Diamond growth rates vs. acetylene concentrationsThin Solid Films, 1992
- The thermal conductivity of chemical-vapor-deposited diamond films on siliconJournal of Applied Physics, 1992
- The growth kinetics of diamond films deposited by hot-filament chemical vapor depositionJournal of Applied Physics, 1991
- Line shape analysis of the Raman spectrum of diamond films grown by hot-filament and microwave-plasma chemical vapor depositionJournal of Materials Research, 1990
- Characterization of diamond films by Raman spectroscopyJournal of Materials Research, 1989
- Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and: Anharmonic effectsPhysical Review B, 1984
- Line Breadths and Voigt Profiles.The Astrophysical Journal, 1947