Reactive Ion Etching of Tungsten in SF 6 ‐ N 2 Plasma

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Abstract
The reactive ion etching of tungsten has been studied in a parallel plate electrode configuration with various cathode materials in an gas mixture. The use of an cathode enhances the etching rate of W when 10–20% of nitrogen is added to the plasma. This result is explained by the change in gas‐phase chemistry due to oxygen and nitrogen reactions and by the increase of the ion energy. As a result, a cleaning of the W surface by removal of sulfur and desorption of species has been observed by means of XPS analysis of the etched tungsten surface. Mass spectrometric measurements indicate that the loading effect also contributes to increase the W etching rate.

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