Some thermal and mechanical properties of InP essential to crystal growth modeling
- 1 May 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (3) , 559-565
- https://doi.org/10.1016/0022-0248(85)90362-8
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Crystal growth progress in response to the needs for optical communicationsJournal of Crystal Growth, 1983
- Etch features in Czochralski-grown single crystal indium phosphideJournal of Materials Science, 1980
- An evaluation of the thermal and elastic constants affecting GaAs crystal growthJournal of Crystal Growth, 1980
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Studies of thermoelectric characteristics of InPxAs1−x alloysPhysica Status Solidi (a), 1976
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973
- Elastic Constants of Single-Crystal Indium PhosphideJournal of Applied Physics, 1966
- Thermal Conductivity and Seebeck Coefficient of InPPhysical Review B, 1964