SOS Island Edge Profiles Following Oxidation
- 1 April 1975
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 07350791,p. 34-37
- https://doi.org/10.1109/irps.1975.362673
Abstract
A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a " V"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.Keywords
This publication has 0 references indexed in Scilit: