Passivation of dry-etching damage using low-energy hydrogen implants
- 1 December 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (12) , 432-435
- https://doi.org/10.1109/EDL.1983.25792
Abstract
Reactive-ion etching-and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In-this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.Keywords
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