On the effectiveness of dislocation loops as sites for the adsorption of implanted ions

Publisher Website

1 January 1970

journal article
Published by Taylor & Francis in Radiation Effects

Vol. 6 (2) , 313-318
https://doi.org/10.1080/00337577008236311

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

ANNEALING CHARACTERISTICS OF n-TYPE DOPANTS IN ION-IMPLANTED SILICON
Applied Physics Letters, 1969
Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
Journal of Applied Physics, 1969
Observation of ion bombardment damage in silicon
Philosophical Magazine, 1968
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
Canadian Journal of Physics, 1968