Growth and structure of rf-sputtered HgS films on NaCl

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Abstract
The growth and structure of rf-sputtered HgS films on NaCl substrates mainly at room temperature have been examined by electron diffraction and transmission electron microscopy. Very thin films (∼20 Å thick) on air-cleaved (001) substrates were epitaxially grown in β-HgS (001), β-HgS (111), and α-HgS (00.1) orientations. The films on air-cleaved (110) and polished (111) substrates were basically polycrystalline β-HgS, and partially grown in parallel orientation to the substrate surfaces. As the film thickness increased to more than approximately 200 Å, α-HgS layers started to grow on the β-HgS films, producing 〈111〉 streaks and many extra reflections in the diffraction patterns. α-HgS films approximately 2000 Å thick had (10.2), (11.0) and (20.7), and (00.1) and (10.1) orientations in the cases where (001), (110), and (111) NaCl substrates were used. These orientations are discussed by using a growth model of which α-HgS layers were grown on the {111} facets of β-HgS layers.

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