InGaAsP Laser Diodes
- 19 September 1980
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 224, 113-121
- https://doi.org/10.1117/12.958688
Abstract
The advantages and properties of InGaAsP laser diodes in the 1.0 - 1.7 μm spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy) and operating principles of these devices are briefly reviewed. State of the art device results from 1.3 and 1.55 μm devices are then presented. The modal, thermal and reliability properties of these devices, as well as their commercial availability, are also discussed and possible directions for future applications are considered.© (1980) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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