Modelling DC characteristics of dual-gate GaAs MESFETs
- 1 January 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 130 (4) , 182-186
- https://doi.org/10.1049/ip-i-1.1983.0033
Abstract
An analytical DC nonlinear model for the dual-gate GaAs MESFET is reported. Explicit solutions for the internal voltages, the various operating modes and the overall output transfer characteristics are given in terms of the applied external voltages. The model representation is particularly efficient and its defining parameters are rapidly and simply evaluated directly from the data sheet. The validity of the model is verified by the very good correlation obtained between detailed simulated and experimental characteristics over a wide range of operating conditions, for a typical microwave dual-gate GaAs MESFET.Keywords
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