Low-noise operation of buried channel MOS transistors

22 October 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (22) , 1173-1174
https://doi.org/10.1049/el:19870815

Abstract

Results are presented which show that extremely low-noise performance is possible in buried n-channel transistors. By careful choice of operating point, low-noise operation with useful gain is possible. The use of these devices as circuit elements is discussed.

Keywords

BURIED CHANNEL MOS TRANSISTORS
OPERATING POINT
LOW-NOISE PERFORMANCE
LOW-NOISE OPERATION
N-CHANNEL TRANSISTORS

This publication has 0 references indexed in Scilit: