The intervalley transfer mechanism of negative resistivity in bulk semiconductors
- 1 December 1965
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 86 (6) , 1205-1219
- https://doi.org/10.1088/0370-1328/86/6/306
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Intervalley transfer of hot electrons in gallium arsenidePhysics Letters, 1965
- CW microwave oscillations in GaAsProceedings of the IEEE, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963
- Electronic Band Structure of Group IV Elements and of III-V CompoundsPhysical Review B, 1963
- Infrared lattice reflection spectra of III–V compound semiconductorsJournal of Physics and Chemistry of Solids, 1962
- Band edge emission properties of CdTeJournal of Physics and Chemistry of Solids, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Dielectric Breakdown in SolidsProceedings of the Physical Society. Section B, 1956