Growth of epitaxial (100) gallium arsenide films using the single-source precursor [Me2Ga(.mu.-t-Bu2As)]2
- 1 January 1992
- journal article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 4 (1) , 7-9
- https://doi.org/10.1021/cm00019a003
Abstract
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