Influence of high-temperature annealing on positron annihilation in electron-irradiated silicon

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16 June 1978

journal article
Published by Wiley in Physica Status Solidi (a)

Vol. 47 (2) , K149-K152
https://doi.org/10.1002/pssa.2210470263

Abstract

No abstract available

This publication has 7 references indexed in Scilit:

Positron annihilation in Si and GaAs crystals with an applied magnetic field
Physics Letters A, 1976
Positron escape from annihilation centers in electron-irradiated Si crystals
Physics Letters A, 1975
The measurement of the formation energy of a vacancy in Cu by positron annihilation
Journal of Physics F: Metal Physics, 1973
Electrical Studies of Electron-Irradiated $n$ -Type Si: Impurity and Irradiation-Temperature Dependence
Physical Review B, 1967
Recovery of Electrical Properties in 45-MeV-Electron-Irradiated $n$ -Type Si from 80 to 350°K
Physical Review B, 1965
Defects in Irradiated Silicon. II. Infrared Absorption of the Si- $A$ Center
Physical Review B, 1961
Temperature Effect on Positron Annihilation in Condensed Matter
Physical Review B, 1958