HOT ELECTRON EMISSION FROM SILICON UNDER PULSED LASER EXCITATION
Open Access
- 1 October 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C7) , C7-149
- https://doi.org/10.1051/jphyscol:1981717
Abstract
Under moderate pulsed laser excitation, silicon is shown to emit electrons in the vacuum at photon energies well below the work function ϕ. Two distinct processes are observed, 1) a two-quantum photoemission at low photon fluxes and high photon energies (> ϕ/2) and, 2) a theormoemisssion at photon fluxes or low photon energies (< ϕ/2). While the first effect yields information about the electronic structure of silicon under irradiation, the second one probes the properties of the carrier plasma. The temperature of this plasma has been evaluated to (1800 ± 100) K for (0.04 Jcm-2, 2 ns) irradiancesKeywords
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