A new nonlinear I(V) model for FET devices including breakdown effects
- 1 April 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (4) , 104-106
- https://doi.org/10.1109/75.282573
Abstract
The nonlinear FET I(V) behavior, including gate conduction and breakdown, has been investigated using a pulse measurement setup. An excessive current source has been observed in addition to the usual gate breakdown current. From these measurements, a nonlinear model including the conduction, breakdown, and excessive current phenomenon is proposed for the nonlinear simulation of high-power circuits. This I(V) model presents an improvement in terms of load line prediction and limits for the high-power nonlinear circuit design.Keywords
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