Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation
- 15 November 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (19) , 12908-12915
- https://doi.org/10.1103/physrevb.58.12908
Abstract
Pump-probe transmission experiments have been performed on PbSe above the fundamental absorption edge near 4 μm in the temperature range 30 to 300 K, using the Dutch ps free-electron laser. For temperatures below 200 K and carrier densities above the threshold for stimulated emission, stimulated recombination represents the most efficient recombination mechanism with relatively fast kinetics in the 50–100-ps regime, in good agreement with earlier reports of photoluminescent emission. Above this temperature Auger recombination dominates, and the Auger coefficient C is determined from the pump-probe decay curves. In the low-temperature regime the Auger coefficient is determined from the decay curves at times beyond 100 ps. The Auger coefficient is approximately constant (with a value of about between 300 and 70 K, and then drops a value of about at 30 K, in good agreement with the theory for nonparabolic near-mirror bands and nondegenerate statistics. It is found that C for PbSe is between one and two orders of magnitude lower than for of comparable band gap.
Keywords
This publication has 21 references indexed in Scilit:
- GaSb–PbSe–GaSb double heterostructure midinfrared lasersApplied Physics Letters, 1998
- An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow-gap semiconductorsJournal of Applied Physics, 1996
- Threshold of stimulated emission in multivalley lead saltsJournal of Applied Physics, 1995
- Magnetooptical investigations and four-wave-mixing spectroscopy of PbSePhysical Review B, 1988
- Intrinsic recombination in dependence on doping concentration and excitation level application to lead chalcogenidesPhysica Status Solidi (b), 1983
- Lifetime calculations for Auger recombination in lead-tin-tellurideIEEE Journal of Quantum Electronics, 1982
- Auger recombination in PbSnTe‐like semiconductorsPhysica Status Solidi (b), 1978
- Recombination in Pb0.83Sn0.17Te at high levels of optical excitationPhysica Status Solidi (b), 1977
- Theoretical Energy-Band Parameters for the Lead SaltsPhysical Review B, 1966
- Band Edge Structure of PbS, PbSe, and PbTePhysical Review B, 1964