RIE etching of deep Bragg grating filters in GaInAsP/InP
- 17 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (17) , 1177-1178
- https://doi.org/10.1049/el:19890789
Abstract
An RIE (CH4/H2 process is presented for the production of up to 1 µm-deep first-order Bragg gratings with a grating constant of A = 0.23µm in InP and GaInAsP. A Bragg grating filter on a GaInAsP/InP rib waveguide showed a stopband width as large as 5nm at −10dB and a nearly rectangular shape of the filter function.Keywords
This publication has 1 reference indexed in Scilit:
- Bragg gratings on InGaAsP/InP waveguides as polarization independent optical filtersJournal of Lightwave Technology, 1989