Thermal stability of TiSi2 on mono- and polycrystalline silicon
- 1 July 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (1) , 243-246
- https://doi.org/10.1063/1.337688
Abstract
Thermal stability of TiSi2 on mono‐ and polycrystalline silicon was investigated by cross‐sectional transmission electron microscopy and high‐resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.This publication has 2 references indexed in Scilit:
- Refractory silicides of titanium and tantalum for low-resistivity gates and interconnectsIEEE Transactions on Electron Devices, 1980
- Advances in Transmission Electron Microscope Techniques Applied to Device Failure AnalysisJournal of the Electrochemical Society, 1980