Evidence for theSwelling Constant Energy Surface for Heavy Holes in Silicon
- 15 September 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 131 (6) , 2442-2444
- https://doi.org/10.1103/physrev.131.2442
Abstract
A newly devised experimental technique has revealed that the puzzling weak-field anisotropy of the galvanomagnetic effects in -type silicon above 77°K belongs, according to our classification, to the last of the four possible types for cubic semiconductors. The strange behavior is ascribable to the growth of the swelling energy contour for the heavy-hole band. A brief description is given of the calculation of the nonparabolicity with the recent band parameters and of the calculation of the conductivity tensor for a fictitious energy surface.
Keywords
This publication has 15 references indexed in Scilit:
- Anisotropic Hall Coefficients in n-Type GermaniumJournal of the Physics Society Japan, 1960
- Galvanomagnetic Effects in-Type SiliconPhysical Review B, 1960
- Weak-Field Magnetoresistance in-Type SiliconPhysical Review B, 1958
- Galvanomagnetic Effects in Oriented Single Crystals of-Type GermaniumPhysical Review B, 1958
- Magnetoresistance of Holes in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1957
- Magnetoconductivity in-Type GermaniumPhysical Review B, 1957
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956
- Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1954
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954
- The Magneto-Resistance Effect in Oriented Single Crystals of GermaniumPhysical Review B, 1951