GaAs MESFET prepared by molecular beam epitaxy (MBE)
- 1 January 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (1) , 30-31
- https://doi.org/10.1063/1.88554
Abstract
GaAs metal‐semiconductor field‐effect transistors (MESFET) have been prepared by molecular‐beam epitaxy. At 6 GHz a noise figure of 3 dB was obtained with a corresponding gain of 10 dB. The transconductance of the device was 28 mmhos and Fmax was approximately 35 GHz.Keywords
This publication has 7 references indexed in Scilit:
- GaAs FET Prepared with Molecular Beam Epitaxial FilmsJapanese Journal of Applied Physics, 1975
- GaAs IMPATT diodes prepared by molecular beam epitaxyApplied Physics Letters, 1974
- Interface and doping profile characteristics with molecular-beam epitaxy of GaAs: GaAs voltage varactorJournal of Applied Physics, 1974
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- Growth of Periodic Structures by the Molecular-Beam MethodApplied Physics Letters, 1971
- Film Deposition by Molecular-Beam TechniquesJournal of Vacuum Science and Technology, 1971
- High-speed gallium-arsenide Schottky-barrier field-effect transistorsElectronics Letters, 1970