Epitaxial YBa2Cu3Ox thin films with x=6–7 by oxygen in-diffusion following laser deposition

15 August 1990

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 68 (4) , 1782-1786
https://doi.org/10.1063/1.346609

Abstract

We have synthesized (001)‐epitaxially grown YBa₂Cu₃O_x thin films with x=6–7 by laser deposition without post‐annealing. A key point in the control of x is oxygen pressure during rapid cooling following the deposition. The relation between x and oxygen pressure almost agrees with a thermal equilibrium curve at 500 °C. This can be explained by the incorporation of oxygen during the cooling, considering that the oxygen in‐diffusion is enhanced by the fast ab‐plane diffusion in misoriented regions.

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