Influence of pressure on the mobility in heavily doped n‐type indium antimonide
- 1 December 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 48 (2) , 519-524
- https://doi.org/10.1002/pssb.2220480208
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Scattering on short‐range potentials in InSbPhysica Status Solidi (b), 1971
- Elastic Electron Scattering in InSb‐Type SemiconductorsPhysica Status Solidi (b), 1971
- Electron scattering and transport phenomena in n-InSbJournal of Physics and Chemistry of Solids, 1971
- The Dependence of Thermoelectric Power and Conductivity of n‐Type Indium Antimonide on Hydrostatic PressurePhysica Status Solidi (b), 1969
- Effect of Pressure on the Electrical Conductivity of InSbPhysical Review B, 1955
- Effect of Pressure on the Electrical Properties of Indium AntimonidePhysical Review B, 1955