Numerical solution of the semiconductor transport equations with current boundary conditions
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (9) , 1092-1096
- https://doi.org/10.1109/T-ED.1983.21263
Abstract
The semiconductor transport equations are solved by a hybrid finite-element method with current specified as a boundary condition at device contacts. Single carrier or bipolar devices of arbitrary shape, operating under transient or steady-state conditions, can be simulated with current sources or simple circuit elements connected to device terminals. This paper describes the numerical technique and device applications.Keywords
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