Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s
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- 27 October 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (17) , 3504-3506
- https://doi.org/10.1063/1.1622799
Abstract
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devicesKeywords
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