InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE

18 June 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (13) , 1228-1230
https://doi.org/10.1049/el:19920775

Abstract

Carbon-doped InGaP/GaAs/InGaP double heterostructure bipolar transistors with 25 Å setback layer are grown by chemical beam epitaxy. Transistors with nonalloyed base contacts show a very high common emitter current gain of 120 and very low collector saturation voltage of 75 mV at room temperature.

Keywords

C DOPED BARE
HBT
CHEMICAL BEAM EPITAXY
DHBT
NONALLOYED BASE CONTACTS
INGAP-GAAS:C-INGAP
CBE
DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS
HIGH COMMON EMITTER CURRENT GAIN
LOW COLLECTOR SATURATION VOLTAGE

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