Epitaxial vapor growth of GaAs1−xPx on germanium substrates and their opto-electronic properties
- 10 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 249-252
- https://doi.org/10.1016/0022-0248(74)90313-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The X-ray spectrochemical analysis of gallium phosphide layers on germanium substratesBUNSEKI KAGAKU, 1974
- High-efficiency Ga1−xAlxAs–GaAs solar cellsApplied Physics Letters, 1972
- Scanning Electron Microscope Characterization of GaP Red-Emitting DiodesJournal of Applied Physics, 1972
- GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAsJournal of Applied Physics, 1972