Epitaxial CdTe films on GaAs/Si and GaAs substrates
- 1 July 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 4 (4) , 2153-2157
- https://doi.org/10.1116/1.574046
Abstract
Epitaxial films of GaAs on (100)silicon were used as substrates for the preparation of high quality epitaxial layers of (100)CdTe, using a simple ultrahigh vacuum technique. Conditions were defined for the consistent formation of the (100)CdTe on (100)GaAs or GaAs/Si. Double crystal x-ray diffraction rocking curves for the GaAs films on Si have shown full width at half maximum as low as 20 s of arc. Both the CdTe and GaAs films are structurally stable to multiple thermal shocks between 80 K and room temperatures, and to elevated temperatures in the range of 400 to 600 °C.Keywords
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