Dislocation Etch Pits in Single Crystal GaAs
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 32 (1) , K13-K15
- https://doi.org/10.1002/pssb.19690320155
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystalsJournal of Physics and Chemistry of Solids, 1965
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960