Modeling of low-pressure deposition of SiO2by decomposition of TEOS

• 1 April 1979
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 26  (4) , 658-662
• https://doi.org/10.1109/t-ed.1979.19474

Abstract

Keywords

• CHEMICAL VAPOR DEPOSITION
• SEMICONDUCTOR DEVICE MODELING
• FABRICATION
• VERY LARGE SCALE INTEGRATION
• SILICON
• DIELECTRICS
• LOW PRESSURE
• PREDICTIVE MODELS
• FLUID FLOW
• SILICON WAFER