Deposition of self-polarized PZT films by planar multi-target sputtering
- 1 January 1997
- journal article
- materials processing---pvd
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 14 (1) , 141-149
- https://doi.org/10.1080/10584589708019986
Abstract
A planar multi target sputtering approach was used to deposit self polarized PZT films on TiO2/Pt bottom electrodes for the use in thin film pyroelectric IR detector arrays. By using elevated substrate temperatures of about 450°C “in situ” growth of tetragonal PZT could be achieved. The films exhibited pyroelectric currents without poling. The pyroelectric coefficient was 2×10−4 C/m2K, the dielectric constant was 300 and dielectric loss tan δ was 0.01. The self polarization disappears after heating the sample to 600°C. Stresses were studied in the thin film processing for the bottom electrode and the PZT film. The TiO2/Pt electrode is under high tensile stress of 900 MPa after preparation. PZT has a small compressive stress of -60 MPa, the whole TiO2/Pt/PZT stack has a tensile stress of +80 MPa. This low stress level together with the self polarization and the good electrical properties makes the films suitable for the use in pyroelectric detector arrays.Keywords
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