Phase control of cubic boron nitride thin films

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Abstract
Ion beam assisted evaporation was used to deposit cubic and hexagonal boron nitride thin films.Boron was evaporated and bombardment was by argon and nitrogen ions. The effect of preparation conditions on the resulting phase was studied, and the relationship between the phase and the energy and momentum transferred into the film through ion bombardment was examined. It is shown that for a given temperature, the controlling factor in the resulting thin film phase is the momentum transferred into the film per depositingboron atom. At 300–400 °C a sharp threshold value of momentum‐per‐atom exists below which films are hexagonal and above which they are cubic. For 400 °C this threshold occurred at 200 (eV×amu)1/2 which is equal to 3.3×10−21 m kg s−1. Depositions performed using krypton and xenon instead of argon as the second bombarding gas confirmed this momentum‐per‐atom value. A second threshold was also observed, which was bombarding species dependent, above which either complete resputtering of the deposited material or reversion to the hexagonal phase occurred. Cubic boron nitride deposition was seen to occur in a window of momentum‐per‐atom values between these two thresholds. Using this information it was possible to grow cubic boron nitride using only nitrogen bombardment, although the window of momentum‐per‐atom values for nitrogen is very narrow. The effect of substrate temperature was studied, and it was found to be difficult to grow predominantly cubic phase films below 300–400 °C. The relationship between intrinsic stress and phase of the films is also discussed. A diagram is presented showing film phase as a function of bombardment, substrate temperature, and system chemistry. The parameter of momentum‐per‐atom is shown to combine into a single value the variables of ion beam assisted deposition:deposition rate, ion energy, ion flux, and ion species. It is suggested that, in general, for properties affected by ion bombardment the momentum‐per‐atom transferred into the film is the controlling factor. The results are shown to support momentum transfer as the dominant process in cubic boron nitride thin film formation.