X-ray analysis of the device structures of III-V compound semiconductors

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Abstract
A computer program for the simulation of the x-ray double crystal rocking curves of arbitrary epitaxial structures was established based on x-ray dynamical diffraction theory. Uniformly single-layer, waveguide structures and laser structures as well as superlattices were examined experimentally and theoretically. The theoretical results are in excellent agreement with the experimental ones. For the laser double heterostructures (ABA), the uniformities of the active layer B can be obtained from the variation of the fine structures of the diffraction peaks of A layers. In the studies of quantum-well structures we concluded that there exists incoherent growth in the interface of the specimen where 50% of the epitaxial layers are relaxed. These results are significant for improving quality and growth condition of device structures of III-V compound semiconductor materials.

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