Self-aligned, emitter-edge-passivated AlGaAs/GaAs heterojunction bipolar transistors with extrapolated maximum oscillation frequency of 350-GHz
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2655
- https://doi.org/10.1109/16.163515
Abstract
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This publication has 1 reference indexed in Scilit:
- A multifunctional HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002