Effect of p -doping on carrier lifetime and threshold current density of 1.3 μm GaInAsP/InP lasers by liquid-phase epitaxy

28 August 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (18) , 693-695
https://doi.org/10.1049/el:19800492

Abstract

A correlation was found between the variation of the threshold current density and carrier lifetime with acceptor concentration in the active layer. An injected electron concentration of 2.5–3 × 10¹⁸/cm³, independent of the acceptor concentration in the active layer, was found at the lasing threshold.

Keywords

ACCEPTOR CONCENTRATION
GAINASP/INP
P-DOPING
LASING THRESHOLD
CARRIER LIFETIME
LPE
SEMICONDUCTOR DOPING
SEMICONDUCTOR JUNCTION LASERS
THRESHOLD CURRENT DENSITY

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