Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers

24 October 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (22) , 1025-1026
https://doi.org/10.1049/el:19850727

Abstract

Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers were fabricated from a molecular-beam-grown GRIN-SCH wafer in which a superlattice buffer layer was introduced. Fabricated diodes exhibited excellent lasing characteristics including a very low threshold current of 5 mA with a T₀ value as high as 160 K.

Keywords

SUPERLATTICE BUFFER LAYER
LOW THRESHOLD CURRENT
RIDGE WAVEGUIDE LASER
MOLECULAR-BEAM-GROWN GRIN-SCH WAFER
THRESHOLD CURRENT 5 MA
ALGAAS/GAAS SINGLE-QUANTUM-WELL LASERS
SEMICONDUCTOR LASER