LPE growth of Cd-doped InP
- 2 May 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 53 (2) , 292-296
- https://doi.org/10.1016/0022-0248(81)90077-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- InGaAsP heterostructure avalanche photodiodes with high avalanche gainApplied Physics Letters, 1979
- Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductorsApplied Physics Letters, 1979
- Doping and electrical properties of Mg in LPE AlxGa1−xAsJournal of Applied Physics, 1979
- Growth of p-type InP single crystals by the temperature gradient methodJournal of Crystal Growth, 1978
- The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applicationsJournal of Crystal Growth, 1977
- Incorporation of Si in Liquid Phase Epitaxial InP LayersJournal of the Electrochemical Society, 1976
- Comparison of Zn-doped GaAs layers prepared by liquid-phase and vapor-phase techniques, including diffusion lengths and photoluminescenceJournal of Applied Physics, 1975
- Indium PhosphideJournal of the Electrochemical Society, 1973
- New High Sensitive Electron Resist MaterialsJournal of the Electrochemical Society, 1973