New high-resolution positive and negative photoresist method for λ/4-shifted DFB lasers

9 April 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (8) , 370-371
https://doi.org/10.1049/el:19870271

Abstract

High-resolution positive and negative photoresists were used to fabricate λ/4-phase-shifted corrugations by holographic exposure. To avoid mixing these photoresists, cyclised polyisoprene was used as a midlayer. The shape and depth of the corrugations on the positive and negative photoresist regions were almost the same. Single-mode operation at the Bragg wavelength was confirmed in lasers with the corrugation.

Keywords

NEGATIVE PHOTORESIST
BRAGG WAVELENGTH
CYCLISED POLYISOPRENE
POSITIVE PHOTORESIST
SEMICONDUCTOR LASER
SINGLE MODE OPERATION
HOLOGRAPHIC EXPOSURE
PHASE SHIFTED CORRUGATIONS
DFB LASERS
INP SUBSTRATE

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