Impact ionization in cobalt-doped silicon

• 1 June 1965
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 53  (6) , 635
• https://doi.org/10.1109/PROC.1965.3949

Abstract

Keywords

• IMPACT IONIZATION
• SILICON
• TEMPERATURE
• COBALT
• SEMICONDUCTOR IMPURITIES
• SOLIDS
• MICROWAVE DEVICES
• ELECTRIC BREAKDOWN
• PULSE MEASUREMENTS
• TESTING