Nonresonant Semiconductor Phase Shifter
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 30 (11) , 2034-2036
- https://doi.org/10.1109/tmtt.1982.1131370
Abstract
Distributed p-i-n diodes were appended to the sidewalls of dielectric waveguides in order to produce phase shifters and line-scanning antennas since a change in conductivity of the bulk semiconductor material will change the wavelength in the dielectric guide. RF losses have been reported when the p-i-n modulators are used in this manner. One of the mechanisms of loss can be resonance absorption at specific frequencies. In order to eliminate resonant effects, the p-i-n diode modulator has been redesigned into small periodic segments where each modulator chip is much smaller than one half wavelength.Keywords
This publication has 4 references indexed in Scilit:
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- Electronic Modulated Beam-Steerable Silicon Waveguide Array AntennaIEEE Transactions on Microwave Theory and Techniques, 1980
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