High-efficiency avalanche-diode oscillators and amplifiers in X-band
- 1 March 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 58 (3) , 512-513
- https://doi.org/10.1109/proc.1970.7683
Abstract
High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.Keywords
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