Theory and application of microindentation in studies of glide and cracking in single crystals of elemental and compound semiconductors
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 27 (6) , 1626-1632
- https://doi.org/10.1007/bf00542926
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- The plasticity of GaAs between 415 and 730°CPhilosophical Magazine A, 1990
- Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°CPhilosophical Magazine A, 1989
- The Dissociation of Dislocations in Pure and Doped GaAs CrystalsPhysica Status Solidi (a), 1989
- Extrinsic Dissociation of a Dislocation in GaAs in the Presence of Point DefectsPhysica Status Solidi (a), 1989
- High-Resolution Microscopy of Dissociated Screw Dislocations in GaAsPhysica Status Solidi (a), 1989
- Indentation plasticity and polarity of hardness on {111} faces of GaAsPhilosophical Magazine Part B, 1985
- Deformation and fracture of indium antimonide crystalsJournal of Materials Science, 1976
- Deformation of silicon at low temperaturesJournal of Materials Science, 1974
- Deformation and fracture of germanium single crystalsJournal of Materials Science, 1974
- Dislocations and Plastic Flow in the Diamond StructurePublished by Elsevier ,1969