The mechanism of subnanosecond carrier recombination in a-Si:H
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 543-546
- https://doi.org/10.1016/s0022-3093(05)80175-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Femtosecond energy transfer ina-Si:HPhysical Review B, 1990
- Ultrafast recombination and trapping in amorphous siliconPhysical Review B, 1990
- Picosecond electron drift mobility measurements in hydrogenated amorphous siliconApplied Physics Letters, 1989
- Free-carrier and temperature effects in amorphous silicon thin filmsApplied Physics Letters, 1988
- Identification of electron and hole picosecond trapping processes in doped a-Si:HSolid State Communications, 1988
- Initial Stages of Trapping in-Si:H Observed by Femtosecond SpectroscopyPhysical Review Letters, 1986