Temperature variation in direct and indirect band gaps of β-CdIn2Se4
- 16 July 1990
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 2 (28) , 6119-6126
- https://doi.org/10.1088/0953-8984/2/28/003
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Temperature dependence of the energy gap in semiconductorsCanadian Journal of Physics, 1984
- Energy gap values by optical absorption in I III IV Se4 compoundsCanadian Journal of Physics, 1982
- Dépendance en température de la largeur de bande interdite dans CdIn 2Se4Journal de Physique, 1981
- Determination of the dilation and vibrational contributions to the indirect energy band gap of diamond semiconductorCanadian Journal of Physics, 1979
- Determination of the dilation and vibrational contributions to the energy band gaps in germanium and siliconPhysica Status Solidi (b), 1979
- X-ray investigation of needle-like crystals of CdIn2Se4Physica Status Solidi (a), 1979
- Electronic properties of the defect-zincblende semiconductor CdIn4Se4Solid State Communications, 1977
- Low temperature photoconductivity of ZnIn2Se4 and CdIn2Se4Solid State Communications, 1974
- Optical properties of the two modifications of CdIn2Se4Physica Status Solidi (a), 1972
- Untersuchungen über ternäre Chalkogenide. VI. Über Ternäre Chalkogenide des Aluminiums, Galliums und Indiums mit Zink, Cadmium und QuecksilberZeitschrift für anorganische und allgemeine Chemie, 1955