Identification of interstitial- and vacancy-type dislocation loops in ion-implanted silicon

1 March 1974

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 45 (3) , 1085-1090
https://doi.org/10.1063/1.1663371

Abstract

A quick method of distinguishing between vacancy‐type and interstitial‐type dislocation loops is described which is applicable to foils near orientation and loops in the size range which gives rise to double‐arc contrast. This method utilizes the Kikuchi line pattern and some general rules concerning electron diffraction contrast from small loops. With this method, small prismatic loops in As⁺‐implanted silicon have been shown to be of interstitial type.

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