A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 123-124
https://doi.org/10.1109/vlsit.1995.520888

Abstract

A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.

Keywords

FERROELECTRIC MATERIALS
CAPACITORS
PLUGS
NONVOLATILE MEMORY
DEGRADATION
FABRICATION
LARGE SCALE INTEGRATION
ELECTRODES
FERROELECTRIC FILMS
LABORATORIES

This publication has 1 reference indexed in Scilit:

Ferroelectric Properties of Sol-Gel Derived Pb(Zr, Ti)O₃ Thin Films
Japanese Journal of Applied Physics, 1993