Formation and Growth of Thin Epitaxial Films (Homoepitaxy of Semiconductors)

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Abstract
Epitaxial growth of semiconductors in real crystal substrates begins by two- and three-dimensional nucleation. It is necessary to take into account the nucleus–substrate boundary energy and substrate surface defects, as well as the misfit angle of nucleus and substrate lattices. For the homoepitaxial growth the calculation of two- and three-dimensional nucleation rate on the surface (111), (110), (111) for different supersaturations for quasispherical nuclei is made. It is shown that for GaAs in gas transport processes the formation of films on singular facets is realized by the three-dimensional nucleation. Deviation of substrate orientation from that for the singular planes increases the contribution of the mechanisms of two-dimensional nucleation and of growth by step propagation.

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