Double LDD concave (DLC) structure for sub-half micron MOSFET

Publisher Website

6 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1988.32797

Abstract

No abstract available

Keywords

SEMICONDUCTOR DEVICE FABRICATION

This publication has 4 references indexed in Scilit:

New grooved-gate MOSFET with drain separated from channel implanted region (DSC)
IEEE Transactions on Electron Devices, 1983
An analysis of the concave MOSFET
IEEE Transactions on Electron Devices, 1978
Grooved Gate MOSFET
Japanese Journal of Applied Physics, 1977
Design of ion-implanted MOSFET's with very small physical dimensions
IEEE Journal of Solid-State Circuits, 1974