Near ballistic transport in a nonparabolic-band structure for n- and p-GaAs
- 1 May 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (5) , 933-935
- https://doi.org/10.1109/t-ed.1982.20805
Abstract
The effects of intervalley scattering and conduction-band nonparabolicity are incorporated into calculations of the one-dimensional Poisson's equation. The I-V chaxactetistic is obtained for n+-n--n+and n+-p--n+structures, respectively, by assuming ohmic contacts without spillover effects. The dominant effect for the current deviation from pure ballistic behavior is intervalley transfer.Keywords
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