Blue and green electroluminescence from MBE grownGaN/InGaN heterostructures
- 10 October 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (21) , 2004-2006
- https://doi.org/10.1049/el:19961335
Abstract
Blue and green electroluminescence from GaN/InGaN pn junctions is reported. The layer sequences were grown by molecular beam epitaxy on sapphire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths.Keywords
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