Some Illumination on the Mechanism of SiO2 Etching in HF Solutions

1 March 1983

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 130 (3) , 708-712
https://doi.org/10.1149/1.2119787

Abstract

The etching of in aqueous buffered solutions can be impeded or stopped through the application of an electric field. In CMOS fabrication, very low levels of light can cause the effect. Parallel reaction paths are proposed for the dissolution process, coupled with the electric field's ability to stop or redirect the reaction at an intermediate step.

Keywords

DISSOLUTION PROCESS
INTERMEDIATE STEP
PARALLEL REACTION
SIO2 ETCHING
REACTION PATHS
LOW LEVELS
BUFFERED SOLUTIONS
AQUEOUS BUFFERED
FIELD'S ABILITY

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